Title :
Efficiency of silicon carbide based power inverters analytical results
Author :
Maswood, A.I. ; Raj, Pinkymol Harikrishna ; Vu, P.L.A.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
In this paper, an assessment of the silicon carbide power modules in power inverters is presented. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide b ased inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based inverters, especially at high frequency.
Keywords :
invertors; silicon compounds; wide band gap semiconductors; SiC; power losses; silicon carbide based power inverter efficiency; silicon carbide power modules; three phase inverter; Insulated gate bipolar transistors; Inverters; JFETs; Silicon; Silicon carbide; Switches; Switching frequency; Efficiency; Inverter; Power Loss; Silicon Carbide;
Conference_Titel :
Developments in Renewable Energy Technology (ICDRET), 2012 2nd International Conference on the
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-0463-4
