• DocumentCode
    562160
  • Title

    Doping geometries for 40G carrier-depletion-based silicon optical modulators

  • Author

    Yu, Hui ; Bogaerts, Wim ; Komorowska, Katarzyna ; Baets, Roel ; Korn, Dietmar ; Alloatti, Luca ; Hillerkuss, David ; Koos, Christian ; Freude, Wolfgang ; Leuthold, Juerg ; Van Campenhout, Joris ; Verheyen, Peter ; Wouters, Johan ; Moelants, Myriam ; Absil

  • Author_Institution
    Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium
  • fYear
    2012
  • fDate
    4-8 March 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A comparison is preformed between carrier-depletion modulators with different doping patterns to reach low VπLπ = 0.62 V·cm at DC with interdigitated and lateral PN junctions respectively, but also show modulation at 35 Gbit/s (errorfree).
  • Keywords
    geometrical optics; optical modulation; optoelectronic devices; p-n junctions; semiconductor doping; silicon; PN junctions; carrier-depletion-based silicon optical modulators; doping geometries; doping patterns; Doping; Junctions; Optical device fabrication; Optical modulation; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
  • Conference_Location
    Los Angeles, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0262-3
  • Type

    conf

  • Filename
    6192208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=562160