• DocumentCode
    562188
  • Title

    An electrically pumped Ge-on-Si laser

  • Author

    Michel, J. ; Camacho-Aguilera, R.E. ; Yan Cai ; Patel, Naresh ; Bessette, J.T. ; Romagnoli, M. ; Dutt, B. ; Kimerling, L.C.

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2012
  • fDate
    4-8 March 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; semiconductor lasers; CMOS compatible laser; Ge-Si; electrically pumped Fabry-Perot laser; electrically pumped laser; power 1 mW; wavelength 1520 nm to 1700 nm; Doping; Laser excitation; Laser transitions; Optical waveguides; Pump lasers; Silicon; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
  • Conference_Location
    Los Angeles, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0262-3
  • Type

    conf

  • Filename
    6192236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=562188