Title :
Express method of threshold voltage control of DMOS transistors in the process of their manufacturing
Author :
Politansky, Leonid ; Lesinsky, Valentin
Author_Institution :
Yuriy Fedkovych Chernivtsi Nat. Univ., Chemivtsi, Ukraine
Abstract :
There is shown the use of test structure for DMOSstructure threshold voltage control and correction.
Keywords :
MOS integrated circuits; semiconductor device manufacture; threshold elements; voltage control; DMOS transistors manufacture; threshold voltage control; Boron; Electrical resistance measurement; Electronic mail; Logic gates; Temperature measurement; DMOS Transistors; Threshold Voltage;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
