DocumentCode
562471
Title
Express method of threshold voltage control of DMOS transistors in the process of their manufacturing
Author
Politansky, Leonid ; Lesinsky, Valentin
Author_Institution
Yuriy Fedkovych Chernivtsi Nat. Univ., Chemivtsi, Ukraine
fYear
2012
fDate
21-24 Feb. 2012
Firstpage
448
Lastpage
448
Abstract
There is shown the use of test structure for DMOSstructure threshold voltage control and correction.
Keywords
MOS integrated circuits; semiconductor device manufacture; threshold elements; voltage control; DMOS transistors manufacture; threshold voltage control; Boron; Electrical resistance measurement; Electronic mail; Logic gates; Temperature measurement; DMOS Transistors; Threshold Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-1-4673-0283-8
Type
conf
Filename
6192695
Link To Document