DocumentCode :
562475
Title :
Modeling of resonant-tunneling diode with “Quant ST”
Author :
Fedyay, Artem ; Moskaliuk, Volodymyr
Author_Institution :
Kyiv Polytech. Inst., Kiev, Ukraine
fYear :
2012
fDate :
21-24 Feb. 2012
Firstpage :
455
Lastpage :
456
Abstract :
Two-valley numerical model of resonant-tunneling diode (RTD) is developed. Coherent and incoherent channels of electron transport and transport through emitter quantum well (EQW) are taken into account. Visualization of the micro- and macroscopic quantities was done, using “QuanT ST” application, developed by the authors and based upon the model.
Keywords :
electron transport theory; quantum well devices; resonant tunnelling diodes; EQW; Quant ST application; RTD modeling; coherent channel; electron transport; emitter quantum well; incoherent channel; macroscopic quantity visualization; microscopic quantity visualization; resonant-tunneling diode modeling; two-valley numerical model; Gallium arsenide; Numerical models; Optical scattering; Quantum well devices; Quant ST; quantitative simulation; quantum transport; resonant-tunneling diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
Type :
conf
Filename :
6192701
Link To Document :
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