Title :
Si wires for strain sensor application
Author :
Druzhinin, Anatoly ; Ostrovskii, Igor ; Palewski, Tomasz ; Nichkalo, Stepan ; Koretskyy, Roman ; Berezhanskii, Yevgen
Author_Institution :
Lviv Polytech. Nat. Univ., Lviv, Ukraine
Abstract :
Resistance and magnetoresistance of Si microwires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Si wires, linear thermoresistive characteristics as well as small magnitude of magnetoresistance (of about 5% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and temperature with minimal sensitivity to magnetic field intensity.
Keywords :
elemental semiconductors; gallium; indium; magnetic field measurement; magnetic sensors; magnetoresistance; microsensors; silicon; strain measurement; strain sensors; temperature measurement; Ga-In; Si; high elastic strain sensor application; linear thermoresistive characteristics; magnetic field intensity; magnetoresistance; microwires; multifunctional sensor design; ohmic I-U characteristics; strain measurement; temperature 4.2 K to 300 K; temperature measurement; Magnetic field measurement; Magnetic sensors; Sensor phenomena and characterization; Strain; Strain measurement; Temperature distribution; InGa contacts; magnetoresistance; strain sensors; wires;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
