Title :
Generation of defects in p-n-junctions that are made from GaAs and GaAlAs after the X-ray irradiation
Author :
Irkha, Vasily ; Gorbachev, Victor ; Mikhalaki, Valeriy
Author_Institution :
Odessa Nat. Acad. of Telecommun. named after A. S. Popov, Odessa, Ukraine
Abstract :
The process of generation and reproduction of dark-patch defects in GaAs and GaAlAs p-n-junctions after the X-ray irradiation are considered.
Keywords :
III-V semiconductors; X-ray effects; aluminium compounds; dislocations; gallium arsenide; p-n junctions; GaAs-GaAlAs; X-ray irradiation; dark-patch defects; dislocations; p-n-junctions; Lead; Nonhomogeneous media; Tunneling; X-ray irradiation; dark-patch defects; impurity centre; p-n-junction;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
