DocumentCode
562498
Title
Generation of defects in p-n-junctions that are made from GaAs and GaAlAs after the X-ray irradiation
Author
Irkha, Vasily ; Gorbachev, Victor ; Mikhalaki, Valeriy
Author_Institution
Odessa Nat. Acad. of Telecommun. named after A. S. Popov, Odessa, Ukraine
fYear
2012
fDate
21-24 Feb. 2012
Firstpage
499
Lastpage
500
Abstract
The process of generation and reproduction of dark-patch defects in GaAs and GaAlAs p-n-junctions after the X-ray irradiation are considered.
Keywords
III-V semiconductors; X-ray effects; aluminium compounds; dislocations; gallium arsenide; p-n junctions; GaAs-GaAlAs; X-ray irradiation; dark-patch defects; dislocations; p-n-junctions; Lead; Nonhomogeneous media; Tunneling; X-ray irradiation; dark-patch defects; impurity centre; p-n-junction;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-1-4673-0283-8
Type
conf
Filename
6192733
Link To Document