Title :
Physical properties of thin ZnO layers
Author :
Bulanyi, M.F. ; Kovalenko, O.V. ; Omelchuk, A.R. ; Polozov, K. Yu ; Skuratovskaya, O.V.
Author_Institution :
Oles Honchar Dnipropetrovsk Nat. Univ., Dnipropetrovsk, Ukraine
Abstract :
It has been investigations the photoluminescence spectra, form of the surface and x-ray diffraction analyzing of ZnO epitaxial layers grown by VPE and MOCVD technology.
Keywords :
II-VI semiconductors; MOCVD; X-ray diffraction; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; MOCVD; VPE; X-ray diffraction; ZnO; epitaxial layers; photoluminescence; physical properties; surface morphology; Compounds; Epitaxial growth; X-ray diffraction; X-ray lasers; Zinc oxide; morphology of surface; photoluminescence; x-ray diffraction analyzing; zinc oxide;
Conference_Titel :
Modern Problems of Radio Engineering Telecommunications and Computer Science (TCSET), 2012 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-1-4673-0283-8
