Title :
Calculation of time response for MSM photodetector using Monte Carlo simulation
Author :
Amiri, Y. ; Soroosh, M.
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Abadan, Iran
Abstract :
In this paper, we present an efficient Monte Carlo model to calculate the time response for GaAs MSM photodetector. Our model includes two valleys and two bands for electrons and holes respectively. We simulate optical pulse absorption and trajectory of carriers to calculate electron and hole currents. Also, we calculate the effect of different voltages and optical pulses on external photocurrent. The good agreement between our results and other simulations validates the presented model.
Keywords :
III-V semiconductors; Monte Carlo methods; electron-hole recombination; gallium arsenide; light absorption; metal-semiconductor-metal structures; photoconductivity; photodetectors; GaAs; MSM photodetector; Monte Carlo simulation; carrier trajectory; electron current calculation; hole current calculation; metal-semiconductor-metal; optical pulse absorption; photocurrent; time response; Gallium arsenide; Heating; Lighting; Optical pulses; Optical scattering; Semiconductor device modeling; MSM photodetector; Monte Carlo simulation; Photocurrent;
Conference_Titel :
Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
Conference_Location :
Nagapattinam, Tamil Nadu
Print_ISBN :
978-1-4673-0213-5
