Calculation of time response for MSM photodetector using Monte Carlo simulation

Author

Amiri, Y. ; Soroosh, M.

Author_Institution

Dept. of Electr. Eng., Islamic Azad Univ., Abadan, Iran

fYear

2012

fDate

30-31 March 2012

Firstpage

141

Lastpage

144

Abstract

In this paper, we present an efficient Monte Carlo model to calculate the time response for GaAs MSM photodetector. Our model includes two valleys and two bands for electrons and holes respectively. We simulate optical pulse absorption and trajectory of carriers to calculate electron and hole currents. Also, we calculate the effect of different voltages and optical pulses on external photocurrent. The good agreement between our results and other simulations validates the presented model.

Keywords

III-V semiconductors; Monte Carlo methods; electron-hole recombination; gallium arsenide; light absorption; metal-semiconductor-metal structures; photoconductivity; photodetectors; GaAs; MSM photodetector; Monte Carlo simulation; carrier trajectory; electron current calculation; hole current calculation; metal-semiconductor-metal; optical pulse absorption; photocurrent; time response; Gallium arsenide; Heating; Lighting; Optical pulses; Optical scattering; Semiconductor device modeling; MSM photodetector; Monte Carlo simulation; Photocurrent;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on

Conference_Location

Nagapattinam, Tamil Nadu

Print_ISBN

978-1-4673-0213-5

Type

conf

Filename

6215988