DocumentCode
562773
Title
Low temperature coefficient CMOS voltage reference based on subthreshold operation
Author
Sambasiva Rao, G. ; PhaniKumar, Y.
Author_Institution
Dept. of Electron. & Commun. Eng., Jawaharlal Nehru Technol. Univ. (JNTU) Kakinada, Kakinada, India
fYear
2012
fDate
30-31 March 2012
Firstpage
238
Lastpage
241
Abstract
In this paper, a new low power, low temperature coefficient CMOS Voltage Reference Circuit independent of temperature and supply voltage is presented. The voltage reference circuit uses the VGS difference between two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage is obtained by combining the weighted VGS difference with weak-inversion VGS voltage, which has a negative temperature coefficient. This circuit provides a nominal reference voltage of 621 mV, a temperature coefficient of 11.5 ppm/°C in [20°C-120°C] from a 1.5 V supply voltage. The line regulation of the reference voltage is 6 mV/V when the supply voltage is increased from 1.5 V to 3 V.
Keywords
CMOS analogue integrated circuits; MOSFET; low-power electronics; reference circuits; MOSFET; line regulation; low power low temperature coefficient CMOS voltage reference circuit; negative temperature coefficient; positive temperature coefficient; subthreshold operation; supply voltage; temperature 20 degC to 120 degC; voltage 1.5 V to 3 V; voltage 621 mV; weak-inversion voltage region; weighted voltage difference; MOSFET circuits; Temperature measurement; Analog circuits; CMOS analog integrated circuits; low voltage; subthreshold; voltage reference;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
Conference_Location
Nagapattinam, Tamil Nadu
Print_ISBN
978-1-4673-0213-5
Type
conf
Filename
6216006
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