DocumentCode :
562773
Title :
Low temperature coefficient CMOS voltage reference based on subthreshold operation
Author :
Sambasiva Rao, G. ; PhaniKumar, Y.
Author_Institution :
Dept. of Electron. & Commun. Eng., Jawaharlal Nehru Technol. Univ. (JNTU) Kakinada, Kakinada, India
fYear :
2012
fDate :
30-31 March 2012
Firstpage :
238
Lastpage :
241
Abstract :
In this paper, a new low power, low temperature coefficient CMOS Voltage Reference Circuit independent of temperature and supply voltage is presented. The voltage reference circuit uses the VGS difference between two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage is obtained by combining the weighted VGS difference with weak-inversion VGS voltage, which has a negative temperature coefficient. This circuit provides a nominal reference voltage of 621 mV, a temperature coefficient of 11.5 ppm/°C in [20°C-120°C] from a 1.5 V supply voltage. The line regulation of the reference voltage is 6 mV/V when the supply voltage is increased from 1.5 V to 3 V.
Keywords :
CMOS analogue integrated circuits; MOSFET; low-power electronics; reference circuits; MOSFET; line regulation; low power low temperature coefficient CMOS voltage reference circuit; negative temperature coefficient; positive temperature coefficient; subthreshold operation; supply voltage; temperature 20 degC to 120 degC; voltage 1.5 V to 3 V; voltage 621 mV; weak-inversion voltage region; weighted voltage difference; MOSFET circuits; Temperature measurement; Analog circuits; CMOS analog integrated circuits; low voltage; subthreshold; voltage reference;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
Conference_Location :
Nagapattinam, Tamil Nadu
Print_ISBN :
978-1-4673-0213-5
Type :
conf
Filename :
6216006
Link To Document :
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