• DocumentCode
    562773
  • Title

    Low temperature coefficient CMOS voltage reference based on subthreshold operation

  • Author

    Sambasiva Rao, G. ; PhaniKumar, Y.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Jawaharlal Nehru Technol. Univ. (JNTU) Kakinada, Kakinada, India
  • fYear
    2012
  • fDate
    30-31 March 2012
  • Firstpage
    238
  • Lastpage
    241
  • Abstract
    In this paper, a new low power, low temperature coefficient CMOS Voltage Reference Circuit independent of temperature and supply voltage is presented. The voltage reference circuit uses the VGS difference between two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage is obtained by combining the weighted VGS difference with weak-inversion VGS voltage, which has a negative temperature coefficient. This circuit provides a nominal reference voltage of 621 mV, a temperature coefficient of 11.5 ppm/°C in [20°C-120°C] from a 1.5 V supply voltage. The line regulation of the reference voltage is 6 mV/V when the supply voltage is increased from 1.5 V to 3 V.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; low-power electronics; reference circuits; MOSFET; line regulation; low power low temperature coefficient CMOS voltage reference circuit; negative temperature coefficient; positive temperature coefficient; subthreshold operation; supply voltage; temperature 20 degC to 120 degC; voltage 1.5 V to 3 V; voltage 621 mV; weak-inversion voltage region; weighted voltage difference; MOSFET circuits; Temperature measurement; Analog circuits; CMOS analog integrated circuits; low voltage; subthreshold; voltage reference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
  • Conference_Location
    Nagapattinam, Tamil Nadu
  • Print_ISBN
    978-1-4673-0213-5
  • Type

    conf

  • Filename
    6216006