DocumentCode :
562838
Title :
Designing of SET based 5-stage and 3-stage ring oscillator with RC phase delay circuit
Author :
Lourts Deepak, A. ; Dhulipalla, Likhitha ; Shaik, Chand Basha ; Chaitra, S.K.
Author_Institution :
VLSI Syst. Design, M.S. Ramaiah Sch. of Adv. Studies, Bangalore, India
fYear :
2012
fDate :
30-31 March 2012
Firstpage :
606
Lastpage :
610
Abstract :
In future, the necessity of ultra low power based circuit will be increased and physical channel length of the device will be decreased. In nanometer regime, CMOS based circuits may not be used due to problem in its fundamental material. To achieve ultra low power device in nanometer region can be obtained by utilizing Single Electron Transistor (SET). In most of the electronic circuits, clocks are playing a critical role to operate the device with the help of oscillatory circuit and cause the more power dissipation. In this paper, we designed the 5stage and 3stage ring oscillator to generate high frequencies like 45GHz and 70 GHz respectively with ultra low power by means of SET and result obtained as 44.6 GHz and 68.4 GHz respectively. Resistor and capacitor based phase shift delay circuit has been used for phase shifting operation at each stage of the design.
Keywords :
CMOS integrated circuits; RC circuits; delay circuits; microwave integrated circuits; microwave oscillators; microwave phase shifters; single electron transistors; CMOS-based circuits; RC phase delay circuit; SET-based 3-stage ring oscillator; SET-based 5-stage ring oscillator; capacitor-based phase shift delay circuit; electronic circuits; frequency 45 GHz; frequency 70 GHz; nanometer regime; nanometer region; oscillatory circuit; phase shifting operation; physical channel length; power dissipation; resistor-based phase shift delay circuit; single electron transistor; ultra low power device; ultra low power-based circuit; Frequency measurement; Gain measurement; Lead; Logic gates; Oscillators; Phase measurement; Resonant frequency; RO with RC phase shift circuit; Ring oscillator; Single Electron Transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Engineering, Science and Management (ICAESM), 2012 International Conference on
Conference_Location :
Nagapattinam, Tamil Nadu
Print_ISBN :
978-1-4673-0213-5
Type :
conf
Filename :
6216071
Link To Document :
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