• DocumentCode
    563288
  • Title

    Preparation of crystalline Si1−xGex thin films by pulsed ion-beam evaporation

  • Author

    Suematsu, Hisayuki ; Iwashita, Ryuma ; Arikado, Tsunetoshi ; Uchitomi, Naotaka ; Yang, S.-C. ; Jiang, Weihua ; Yatsui, Kiyoshi

  • Author_Institution
    Extreme Energy-Density Research Institute, Department of Electrical Engineering, Nagaoka University of Technology, 940-2188, Japan
  • Volume
    1
  • fYear
    2002
  • fDate
    23-28 June 2002
  • Firstpage
    417
  • Lastpage
    420
  • Abstract
    Thin films of single phase, polycrystalline silicon germanium (Si1−xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1−xGex, whose composition is close to those of the targets.
  • Keywords
    Films; Glass; Heating; Silicon; Thickness measurement; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Power Particle Beams (BEAMS), 2002 14th International Conference on
  • Conference_Location
    Albuquerque, NM, USA
  • ISSN
    0094-243X
  • Print_ISBN
    978-0-7354-0107-5
  • Type

    conf

  • Filename
    6219477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563288