Title :
Preparation of crystalline Si1−xGex thin films by pulsed ion-beam evaporation
Author :
Suematsu, Hisayuki ; Iwashita, Ryuma ; Arikado, Tsunetoshi ; Uchitomi, Naotaka ; Yang, S.-C. ; Jiang, Weihua ; Yatsui, Kiyoshi
Author_Institution :
Extreme Energy-Density Research Institute, Department of Electrical Engineering, Nagaoka University of Technology, 940-2188, Japan
Abstract :
Thin films of single phase, polycrystalline silicon germanium (Si1−xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1−xGex, whose composition is close to those of the targets.
Keywords :
Films; Glass; Heating; Silicon; Thickness measurement; X-ray scattering;
Conference_Titel :
High-Power Particle Beams (BEAMS), 2002 14th International Conference on
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
978-0-7354-0107-5
