A simple two-dimensional saturation model of short-channel IGFETS for CAD applications

Author

El-Mansy, Y.A. ; Boothroyd, A.R.

Author_Institution

Bell-Northern Res., Silicon Technol., Ottawa, ON, Canada

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

35

Lastpage

38

Abstract

The characteristics of an IGFET operating in saturation are developed in terms of an approximate two-dimensional model of the drain section of the space charge region. This section is treated as a volume obeying Gauss´s law, thereby enabling the charge contained in it to be related to the integral of the electric displacement density normal to its surface without having to consider the detailed distribution of charge inside. An explicit expression is obtained for the drain conductance showing its dependence on device geometry, processing parameters and applied voltages. Closed form solutions for the current and conductance are obtained by neglecting the mobile carriers in the drain section. Substrate currents are evaluated using a simple impact ionization model.

Keywords

circuit CAD; insulated gate field effect transistors; 2D model; CAD application; Gauss law; closed form solution; device geometry; drain conductance; drain section; electric displacement density normal; mobile carriers; short-channel IGFET; simple impact ionization model; space charge region; substrate currents; two-dimensional saturation model; Abstracts; Insulators; Logic gates; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219605

Filename

6219605