Title :
Properties of ESFI MOS Transistors due to the floating substrate and the finite volume
Author :
Tihanyi, J. ; Schlötterer, H.
Author_Institution :
Res. Labs., Siemens AG, München, Germany
Abstract :
The specific current voltage characteristics of ESFI (or SOS) MOS Transistors are shown and explained. The ESFI MOSTs are produced on silicon islands: in most applications the electrical substrate is at floating potential. This results two effects: At first a threshold voltage change occurs with increasing drain voltage producing a kink in the current curve; if the drain voltage further increases a parasitic bipolar transistor begins to work and effects another kink or bend in the curve. The finite volume and charge below the gate causes a reduced influence of the substrate on the charge in the channel; therefore at higher substrate doping ESFI MOSTs show a higher transconductance than the corresponding bulk transistors. All these effects are described theoretically; the ID-UD-characteristics could be simulated by a computer model based on the physical effects.
Keywords :
MOSFET; bipolar transistors; doping; elemental semiconductors; silicon; ESFI MOS transistors; Si; bulk transistors; computer model; current-voltage characteristics; drain voltage; electrical substrate; floating potential; floating substrate; physical effects; silicon islands; substrate doping ESFI MOST; threshold voltage change; transconductance; Abstracts; Electron traps; Epitaxial growth; Logic gates; RNA; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219606