Title :
Low-level avalanche multiplication in IGFETS
Author :
Troutman, Ronald R.
Author_Institution :
Syst. Products Div., Int. Bus. Machines Corp., Essex Junction, VT, USA
Abstract :
Results are presented for both theoretical and experimental analyses of low-level avalanche multiplication in an Insulated Gate Field-Effect Transistor (IGFET).
Keywords :
insulated gate field effect transistors; IGFET; insulated gate field-effect transistor; low-level avalanche multiplication; Abstracts; Breakdown voltage; Doping; Electric breakdown; Logic gates; Manganese; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219607
