Title :
Geometric and temperature compensating effects of the MOS enhanced capacitor
Author :
Lattin, William ; DeMassa, Tom
Author_Institution :
Semicond. Products Div., Motorola Inc., Phoenix, AZ, USA
Abstract :
Geometric and temperature effects of the MOS enhanced capacitor are shown to be valuable for MOS D to A conversion and for temperature compensation of MOS oscillators. It is also shown that these effects may be deleterious in one transistor memory and high speed bootstrap circuits.
Keywords :
MOS capacitors; bootstrap circuits; compensation; oscillators; transistors; MOS enhanced capacitor; MOS oscillators; geometric effect; high speed bootstrap circuits; temperature compensating effects; transistor memory; Abstracts; Capacitance; Capacitors; Logic gates; Random access memory; Silicon; Standards;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219609
