DocumentCode
563412
Title
Two-phase charge coupled linear imaging devices with self-aligned implanted barrier
Author
Kim, Choong-Ki
Author_Institution
R&D Lab., Fairchild Camera & Instrum. Corp., Palo Alto, CA, USA
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
55
Lastpage
58
Abstract
A buried channel, two-phase CCD analog shift register with self-aligned implanted barriers has shown high charge transfer efficiency with standard 5 volt clocks at 10 MHz bit rates. Two linear image sensors which employ these CCD registers demonstrate the ease of use and the high quality of image reproduction that results from these properties.
Keywords
CCD image sensors; charge exchange; image processing; shift registers; CCD registers; bit rates; buried channel; frequency 10 MHz; high charge transfer efficiency; image reproduction; linear image sensors; self-aligned implanted barrier; two-phase CCD analog shift register; two-phase charge coupled linear imaging devices; voltage 5 V; Bit rate; Charge coupled devices; Clocks; Logic gates; Performance evaluation; Registers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219610
Filename
6219610
Link To Document