Title :
Applications of the electron beam exposure system (EBES)
Author :
Pease, R.F.W. ; Ballantyne, J.P. ; Henderson, R.C. ; Voshchenkov, A.M. ; Yau, L.D.
Author_Institution :
Bell Telephone Labs., Murray Hill, NJ, USA
Abstract :
We review the following applications of electron lithography: (1) making high quality chrome masks for photolithography (2) making, by direct exposure, MOS integrated circuits with finer dimensions than normally obtained with photolithography, to achieve higher packing density and improved electrical performance.
Keywords :
MOS integrated circuits; electron beam lithography; masks; photolithography; EBES; MOS integrated circuits; electron beam exposure system; electron lithography; high quality chrome masks; packing density; photolithography; Abstracts; Arrays; Chromium; Computers; Lithography; Polymers; Standards;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219624
