DocumentCode
563427
Title
A high efficiency CW transferred-electron oscillator with optimized doping profile
Author
Kamei, K. ; Eastman, L.F.
Author_Institution
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
125
Lastpage
128
Abstract
This study is aimed at helping to design X-band C.W. transferred electron oscillators with higher performance. It is shown by calculations that the efficiency in C.W. operation is drastically improved by quantitatively controlling the doping profile to account for the temperature profile, and further governed by carrier concentration times layer thickness (nxℓ) product and diode size. Relations among nxℓ product, diode size, and doping gradient are defined. The calculations are substantiated by experiments.
Keywords
Gunn oscillators; carrier density; diodes; doping profiles; CW operation; NXL product; X-band CW transferred electron oscillators design; carrier concentration; diode size; doping gradient; layer thickness product; optimized doping profile; quantitatively control; temperature profile; Abstracts; Anodes; Current measurement; Heating; IP networks; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219629
Filename
6219629
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