DocumentCode :
563436
Title :
GaAs-Ga1−xAlxAs double-heterostructure distributed feedback diode lasers
Author :
Nakamura, Mitsutoshi ; Aiki, K. ; Umeda, J. ; Yariv, Amnon ; Yen, H.W. ; Morikawa, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
1974
fDate :
9-11 Dec. 1974
Firstpage :
88
Lastpage :
90
Abstract :
Lasing characteristics of GaAs-Ga1-xAlxAs double-heterostructure distributed feedback diode lasers are investigated at 80-100 K under electrical pumping. The main subjects studied here are the spectrum and mode of the distributed feedback laser and its temperature characteristics. Single longitudinal mode oscillation is observed at wavelengths which are determined by the corrugation period. The temperature dependence of the wavelength is about 1/3 that of the cleaved Fabry-Perot laser made from the same wafer.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; semiconductor lasers; Fabry-Perot laser; GaAs-Ga1-xAlxAs; corrugation period; double-heterostructure distributed feedback diode lasers; electrical pumping; lasing characteristics; single longitudinal mode oscillation; temperature 80 K to 100 K; temperature characteristics; temperature dependence; Epitaxial growth; Gallium arsenide; Laser modes; Semiconductor lasers; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1974.6219640
Filename :
6219640
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=563436
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