Title :
High density COS/MOS 1024 bit static RAM
Author :
Dingwall, Andrew G F ; Strieker, R.E.
Author_Institution :
Solid State Technol. Center, RCA Corp., Somerville, NJ, USA
Abstract :
A static 1024 × 1 self-aligned silicon gate COS/MOS Random Access Memory has been developed using `self-registry´ techniques to achieve high packing density. The techniques developed permitted a 7500 transistor COS/MOS memory circuit to be fabricated in a 0.134 × 0.168 inch2 chip, with a 13.4 mil2 cell. Such packing density is approximately 5 times that of conventional metal gate COS/MOS circuits.
Keywords :
MOS memory circuits; SRAM chips; Si; high density COS-MOS static RAM; high packing density; metal gate COS-MOS circuits; self-aligned silicon gate COS-MOS random access memory; self-registry techniques; transistor COS-MOS memory circuit; word length 1024 bit; Abstracts; Cities and towns; Lead; Logic gates; Process control; Random access memory; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219643
