Title :
A multi-gbit/sec electron-beam-semiconductor signal processor
Author :
Bahraman, A. ; Curtis, O.L., Jr. ; Crandall, W.E.
Author_Institution :
Northrop Res. & Technol. Center, Hawthorne, CA, USA
Abstract :
A signal processor has been developed which can multiplex multiple input data lines into a single output (parallel to serial converter) with an output data rate of up to several Gigabit/sec. Among its possible applications, the device is intended for use in digital communications to drive a PIN diode (waveguide) modulator. The specific device to be described consists of a pencil-beam electron gun, a beam rotation system, eight input gates, a beam bending electrostatic Einzel lens, and a single semiconductor target. Operation of the processor is as follows: The beam rotation system launches the pencil e-beam into conical rotation. The conically-rotating beam goes through the gates and is then bent and refocussed by the Einzel lens onto or off the target, depending on the polarity of the input gate signals (ones or zeros). A signal processor output of 0. 8V into 50-Ω has been achieved with a 0. 15 ns-rise-time target at 1. 6 and 2 Gbit/s output data rates. With a 0. 3 ns-rise-time target, the output was 5V into 50-Ω at 1. 6 Gbit/s data rate and can be increased to 10V by doubling the beam current density.
Keywords :
current density; digital communication; digital signal processing chips; electron beam effects; electron guns; lenses; modulators; p-i-n diodes; PIN diode modulator; beam bending electrostatic Einzel lens; beam current density; beam rotation system; bit rate 1.6 Gbit/s; bit rate 2 Gbit/s; conically rotating beam; digital communications; input gates; multielectron-beam-semiconductor signal processor; multiplex multiple input data lines; pencil e-beam; pencil-beam electron gun; resistance 50 ohm; rise time target; single semiconductor target; time 0.15 ns; time 0.3 ns; Abstracts; Bills of materials; Electron tubes; Multiplexing; PIN photodiodes; Semiconductor diodes; Semiconductor waveguides;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219651