Operation and circuit performance of a new negative resistance most

Operation and circuit performance of a new negative resistance insulated-gate field-effect transistor will be described. The negative resistance arises by interaction of a bipolar and an insulated-gate field-effect transistor. The gate voltage-controlled N-shaped negative resistance is similar to that of a tunnel diode, except that larger voltage and current excursions are inherent to this device. Electrical performance of integrated experimental devices and examples of circuit applications will be presented.