DocumentCode
563446
Title
Operation and circuit performance of a new negative resistance most
Author
Zuleeg, R. ; Lehovec, K.
Author_Institution
McDonnell Douglas Astronaut. Co., Huntington Beach, CA, USA
fYear
1974
fDate
9-11 Dec. 1974
Firstpage
149
Lastpage
151
Abstract
Operation and circuit performance of a new negative resistance insulated-gate field-effect transistor will be described. The negative resistance arises by interaction of a bipolar and an insulated-gate field-effect transistor. The gate voltage-controlled N-shaped negative resistance is similar to that of a tunnel diode, except that larger voltage and current excursions are inherent to this device. Electrical performance of integrated experimental devices and examples of circuit applications will be presented.
Keywords
negative resistance; tunnel diodes; circuit application; circuit performance; electrical performance; gate voltage-controlled N-shaped negative resistance; negative resistance insulated gate field effect transistor; tunnel diode; Artificial intelligence; Bismuth; Circuit optimization; FETs; Logic gates; Performance evaluation; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 1974 International
Conference_Location
Washington, DC
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1974.6219652
Filename
6219652
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