Inherent memory effects in ZnS:Mn thin film EL devices

Author

Yamauchi, Y. ; Takeda, M. ; Kakihara, Y. ; Yoshida, M. ; Kawaguchi, J. ; Kishishita, H. ; Nakata, Y. ; Inoguchi, T. ; Mito, S.

Author_Institution

Central Res. Lab., SHARP Corp., Tenri, Japan

fYear

1974

fDate

9-11 Dec. 1974

Firstpage

348

Lastpage

351

Abstract

Remarkable hysteresis were found to excist in a thin film multilayer EL device consisting of a ZnS:Mn active layer sandwiched between a pair of Y₂O₃, insulating layers. Due to its particular construction, hysteresis was observed between the brightness vs. amplitude of the exciting alternating voltage, which is instrumental to realizing the memory function. Electrical Writing and Erasing are possible by the amplitude modulation of the sustaining voltage. The typical memory margin observed here is about 10 to 30 volts (rms) under operating voltage of 170 to 280 volts (rms) with frequency of 1 to 5 kHz. Gray scale display as well as Optical Writing are possible.

Keywords

amplitude modulation; electroluminescent devices; memory architecture; thin film devices; yttrium compounds; zinc compounds; Y₂O₃; ZnS:Mn; active layer; amplitude modulation; electrical erasing; electrical writing; frequency 1 kHz to 5 kHz; gray scale display; insulating layers; memory effects; memory function; memory margin; operating voltage; optical writing; thin film multilayer EL device; voltage 10 V to 30 V; voltage 170 V to 280 V; Abstracts; Gray-scale; Instruments; Optical coupling; Optical films; Optical imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 1974 International

Conference_Location

Washington, DC

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1974.6219664

Filename

6219664