• DocumentCode
    563457
  • Title

    Red electro-luminescence from ZnS:Mn-F thin film

  • Author

    Yamauchi, Y. ; Kishishita, H. ; Takeda, M. ; Inoguchi, T. ; Mito, S.

  • Author_Institution
    Central Res. Lab., SHARP Corp., Tenri, Japan
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    352
  • Lastpage
    355
  • Abstract
    Thin film EL device made of ZnS:TbF3, Mn by means of electron beam evaporation yield red light (peak wave length 7000 Å) at a brightness of 60 Fl. The color of the light varied from orange to red according to the concentration ratio of TbF3 to Mn. Two emission bands were observed, namely at 5850 Å and 7000 Å. Since the orange band is obviously due to the localized center of Mn2+, our experimental results support that the red emission band is due to the localized center of Mn2+, our experimental results support that the red emission bands is due to the localized center of Mn-F.
  • Keywords
    II-VI semiconductors; electroluminescent devices; fluorine; manganese; terbium compounds; thin film devices; wide band gap semiconductors; zinc compounds; ZnS:Mn-F; ZnS:TbF3; electron beam evaporation yield red light; red electroluminescence; red emission band; thin film EL device; Abstracts; Artificial intelligence; Detectors; Films; Manganese; Read only memory; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219665
  • Filename
    6219665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563457