Continuously Variable Threshold Voltage Devices

A new MOS device called Continuously Variable Threshold Voltage Device (CVTD), of which threshold voltage is varying continuously in a horizontal direction perpendicular to the drain current under gate electrode, has been proposed and developed. It was found out from the results of experimental and theoretical analysis that the CVTD has various kinds of new phenomena and electrical characteristics compared with the conventional MOS devices. Moreover, some possible and usable application devices used the CVTD concept have also been proposed and developed. At the same time, a new ion implantation technology named the Lateral Impurity Microprofiling (LIM) technology was developed in order to realize the practical CVTDs.