Title :
GaAs 8 GHz-band high power FET
Author :
Fukuta, M. ; Ishikawa, H. ; Suyama, K. ; Maeda, M.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
A GaAs power FET exhibiting 0.7 W saturation output power and 45% drain efficiency applying 6 V at 8 GHz, has been developed. An interdigitated source and drain electrode, and an overlaid gate electrode to connect in parallel 52 gates, are introduced to achieve 2 μm long and 2600μm wide Schottky gate FET.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electrodes; gallium arsenide; microwave field effect transistors; power field effect transistors; Schottky gate FET; drain efficiency; drain electrode; frequency 8 GHz; high power FET; interdigitated source; overlaid gate electrode; power 0.7 W; voltage 6 V; Abstracts; Contacts; Cutoff frequency; FETs; Gallium arsenide; Logic gates; RNA;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219746
