Title :
A 6 GHz silicon bipolar power transistor
Author :
Chen, J.T.C. ; Verma, K.
Author_Institution :
Microwave Technol. Center, Hewlett Packard Co., USA
Abstract :
The design features of an experimental 6 GHz power transistor are presented. The power performance of the transistor in class A - common emitter, and in class B - common base for a range of inputs, is shown. In class C - common base, the gain and efficiency at 4, 5 and 6 GHz are plotted. The contributing factors to this performance are discussed.
Keywords :
elemental semiconductors; power bipolar transistors; silicon; Si; bipolar power transistor; class A-common emitter; class B-common base; class C-common base; design features; frequency 4 GHz; frequency 5 GHz; frequency 6 GHz; power performance; Abstracts; Epitaxial growth; Integrated circuits;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219750
