• DocumentCode
    563498
  • Title

    Anodic aluminum isolation

  • Author

    Cook, Bob ; Scherrer, Raymond E.

  • Author_Institution
    Int. Telephone & Telegraph Semicond., West Palm Beach, FL, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    266
  • Lastpage
    269
  • Abstract
    In anodic aluminum isolation the selective N+ sub collector is replaced by a blanket N+ epi layer. The P+ isolation is replaced by a silicon-etch, aluminum-evap-oration and partial-anodization. The aluminum down in the etched moats is electrically continuous and is partially anodized swelling to fill the moats, but still retaining a core of aluminum which can be used for a ground buss. The aluminum up on the active areas is electrically isolated, not anodized and stripped in a selective-etch leaving a reasonably planar structure. A2I gives higher yields and better performance in less space at lower costs.
  • Keywords
    aluminium; bipolar integrated circuits; Al; N+ sub collector; P+ isolation; aluminum-evaporation; anodic aluminum isolation; bipolar integrated circuits; blanket N+ epi layer; ground buss; moats; partial-anodization; silicon-etch; Abstracts; Aluminum; Atmosphere; Boron; Current measurement; Standards; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219762
  • Filename
    6219762