• DocumentCode
    563516
  • Title

    Low-voltage tunnel-injection electroluminescent devices

  • Author

    Clark, M.D. ; Baidyaroy, S. ; Ryan, F. ; Ballantyne, J.M.

  • Author_Institution
    Field of Appl. Phys., Cornell Univ., Ithaca, NY, USA
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    340
  • Lastpage
    343
  • Abstract
    Tunnel-injection electroluminescence has been observed in Al-Al2O3-GaAs and Pt-Al2O3-CdS devices formed by vacuum deposition of thin films onto n-type semiconductor crystals. Results show a luminescence voltage threshold comparable to the semiconductor bandgap, and high hole injection efficiency.
  • Keywords
    III-V semiconductors; aluminium compounds; cadmium compounds; electroluminescent devices; gallium arsenide; platinum compounds; semiconductor thin films; vacuum deposited coatings; AlAl2O3-GaAs; PtAl2O3-CdS; low-voltage tunnel-injection electroluminescent devices; luminescence voltage threshold; n-type semiconductor crystals; semiconductor bandgap; thin film vacuum deposition; Abstracts; Educational institutions; Electroluminescent devices; Fabrication; Metals; Physics; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219781
  • Filename
    6219781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563516