• DocumentCode
    563523
  • Title

    Control and design of MOSFET low-level currents by ion-implantation

  • Author

    Masuhara, T. ; Kubo, M.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    1974
  • fDate
    9-11 Dec. 1974
  • Firstpage
    397
  • Lastpage
    399
  • Abstract
    This paper discusses the numerical calculation of log nSF (surface electron density) - VG(gate voltage) curves and experiments. By compensating for the distribution tail of the main impurity by the opposite type impurity, the log nSF - VG curves can be shifted in an almost parallel manner. Fabrication of MOSFET with a desired value of residual current is possible by implanting a sufficient amount of phosphorus first, then a second boron layer near the surface.
  • Keywords
    MOSFET; numerical analysis; MOSFET fabrication; MOSFET low-level currents; boron layer; gate voltage curves; numerical calculation; surface electron density; Boron; Computer aided software engineering; Logic gates; MOSFET circuits; Solids; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 1974 International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1974.6219788
  • Filename
    6219788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=563523