Title :
Femto-joule logic circuit with enhancement type Schottky barrier FET
Author :
Muta, H. ; Yamada, K. ; Okabayashi, H. ; Suzuki, S. ; Tanaka, T. ; Nagahashi, Y.
Author_Institution :
Central Res. Labs., Nippon Electr. Co., Ltd., Kawasaki, Japan
Abstract :
As an approach to an advanced LSI logic, a high speed and low power femto-joule logic circuit has been developed by using enhancement type Schottky barrier gate FET (ESBT) with 31P implanted channel layer.
Keywords :
Schottky barriers; field effect transistors; large scale integration; logic circuits; 31P implanted channel layer; ESBT; advanced LSI logic; enhancement type Schottky barrier FET; femto-joule logic circuit; FETs; Logic gates; Neodymium; Oscillators; Reliability; Substrates; TV;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219789
