Title :
Substrate current-a device and process monitor
Author_Institution :
Syst. Products Div., IBM, Hopewell Junction, NY, USA
Abstract :
Typical characteristics of an n-channel, enhancement mode, insulated-gate field effect transistor (IGFET). The drain current is plotted against the drain voltage for different values of the gate voltage. It can be seen from the figure that, after saturation is reached, the drain current increases again as the drain voltage is further increased. This additional current is attributed to the substrate current and can be measured simultaneously in the substrate lead.
Keywords :
insulated gate field effect transistors; substrates; drain current; drain voltage; enhancement mode IGFET; gate voltage; insulated-gate field effect transistor; n-channel IGFET; process monitor; substrate current; Logic gates; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219790
