Title :
Quasi-saturation region model of an NPN−N transistor
Author :
Perner, Frederick A.
Author_Institution :
Syst. Products Div., Int. Bus. Machines Corp., Kingston, NY, USA
Abstract :
A time dependent circuit model of an NPN-N transistor is described for the simulation of the quasi-saturation region. A Current Induced Base factor is defined from an injection level model of the N- collector and used to modify the static and dynamic properties of a basic Ebers-Moll model. Curve tracer and time dependent, turn-on characteristics are used to demonstrate the effect of the CIB factor.
Keywords :
power bipolar transistors; NPN-N power transistor; basic Ebers-Moll model; current induced base factor; curve tracer; dynamic property; injection level model; quasisaturation region model; static property; time dependent circuit model; turn-on characteristics; Abstracts; Current measurement; Integrated circuit modeling; Neodymium; Optical wavelength conversion; Semiconductor process modeling; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219793
