Title :
A thermal model for high power devices design
Author :
Leturcq, Ph ; Cavalier, C.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., Toulouse, France
Abstract :
A simple and precise way of establishing heat flow models is first described, which enables the static temperature distribution in the active region of semiconductor power devices to be determined. Secondly, for a precise device, coupling of the thermal model to a suitable distributed electric model of the active region allows, by a numerical iterative process, the complete simulation of both electrical and thermal aspects of device behaviour, including possible instabilities. This approach for the study of interactive mechanisms in power devices is illustrated by some examples of particular interest.
Keywords :
iterative methods; power semiconductor devices; temperature distribution; active region; distributed electric model; heat flow model; high power devices design; numerical iterative process; semiconductor power devices; static temperature distribution; thermal model; Abstracts; Couplings; Electric breakdown; Heating; Numerical models; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219794
