Title :
Fabrication and operation of an amorphous-emitter transistor
Author :
Petersen, Kurt E. ; Adler, David ; Shaw, M.P.
Author_Institution :
Dept. of Electr. Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
A unique three-terminal device, consisting of a threshold-type chalcogenide glass as emitter and crystalline Si as base and collector, has been fabricated and investigated. If the amorphous semiconductor is in the off state, all terminal-to-terminal impedances are high and the current gain is less than unity. However, when the glass is switched into the on state, ordinary transistor operation is obtained with net small-signal gains of 3-5. A lock-on phenomenon is also observed in which the device remains in the high-gain state after the base switching pulse is removed. The several modes of operation can be explained in terms of band models previously proposed for chalcogenide-glass/Si heterojunctions. An additional implication of the observed characteristics is the predominance of electrons in the on state of the glass, in direct contrast to the low-field behavior. Potential applications of the device will be discussed.
Keywords :
MOSFET; chalcogenide glasses; electric impedance; elemental semiconductors; semiconductor heterojunctions; silicon; Te39As36Si17Ge7P-Si; amorphous semiconductor; amorphous-emitter transistor; band models; base switching pulse; crystalline Si; current gain; electrons predominance; high-gain state; lock-on phenomenon; low-field behavior; ordinary transistor operation; small-signal gains; terminal-to-terminal impedances; three-terminal device; threshold-type chalcogenide glass; Abstracts; Epitaxial growth; Fabrication; Glass; Integrated circuits; Silicon; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219813
