Title :
New method of passivating GaAs WITH Al2O3
Author :
Singh, R. ; Hartnagel, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Newcastle upon Tyne, Newcastle upon Tyne, UK
Abstract :
1200 Å thick layers have been grown on n-GaAs by slowing evaporating Al though a low pressure of O2. The resulting interface state density N35 was measured around 1012 cm-2 (eV)-1, i.e about 5 times smaller than those of native oxides on GaAs. N35 and the charge capture time are given across some parts of the energy gap near the flat-band level and N35 shows a peak near the conduction band. The flat-band voltage is + 0.l Volt. which indicates an immobile charge density of 6 × 10 cm-2. Very slow traps show a similar density.
Keywords :
aluminium compounds; gallium arsenide; passivation; Al2O3; GaAs; charge capture time; conduction band; energy gap; flat-band voltage; immobile charge density; interface state density; thick layers; very slow traps; Abstracts; Capacitance; Face; Frequency measurement; Gallium arsenide; Silicon; Surface treatment;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219815
