Photocurrent characteristics of oxygenated fullerene thin film

In order to obtain the higher photocurrent in metal/insulator/semiconductor junction cells, oxygenated fullerene thin films are used as the insulator thin film. The highly oxygenated fullerene thin films are obtained by using RF O2 plasma with cooling system. From the experimental results, it is found that oxygenated fullerene thin films, C60Ox (x=8, 16, 24, 38, 50 etc.), are obtained by using a laser-desorption time-of-flight mass spectrometer (TOF-MS). By using the 200 nm in thick multilayer fullerene junction film, the photocurrent becomes 30 times larger that of normal fullerene.