DocumentCode :
563672
Title :
Radioactive reliability of programmable memories
Author :
Loncar, B. ; Osmokrovic, P. ; Stojanovic, M.
Author_Institution :
Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, P.O.Box 3554, 11000, Yugoslavia
fYear :
2000
fDate :
20-25 June 2000
Firstpage :
992
Lastpage :
995
Abstract :
The aim of this paper is to examine the reliability of EPROM and EEPROM components under the influence of gamma radiation. This problem is significant for military industry and space technology. Total dose results are presented for the JL 27C512D EPROM and 28C64C EEPROM components. There is evidence that EPROM components have better radioactive reliability than EEPROM components. Also, the EPROM´s changes are reversible and after erasing process and reprogramming EPROM components are functional. On the other hand EEPROM´s changes are irreversible and under the influence of gamma radiation all EEPROM components became permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.
Keywords :
Argon; EPROM; Logic gates; Repeaters; EEPROM; EPROM; gamma radiation; radioactive reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High-Power Particle Beams, 2000 13th International Conference on
Conference_Location :
Nagaoka, Japan
Type :
conf
Filename :
6220036
Link To Document :
بازگشت