Title :
Fast power semiconductor devices for pulsed power applications
Author :
Ishii, S. ; Yasuoka, K. ; Ibuka, S.
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152-8552, Japan
Abstract :
Semiconductor power devices with fast turn-on characteristics are appearing in the market. The issues in developing the devices for pulsed power applications such as gate driving technique and characterization of the devices, are summarized. SI-thyristors were characterized as a fast high current switching device. A stacked SI-thyristor switching unit was designed and tested that was operated with a repetition rate of 2kHz. Temporal and spatial behavior of carrier number densities in a silicon wafer was measured by the free-carrier absorption method with a pulsed YAG laser.
Keywords :
Acceleration; Discharges; Logic gates; Performance evaluation; Semiconductor lasers; Switches; SI-thyristor; carrier density; semiconductor power device; switch;
Conference_Titel :
High-Power Particle Beams, 2000 13th International Conference on
Conference_Location :
Nagaoka, Japan
