Title :
Ferroelectric thin films prepared by backside pulsed ion-beam evaporation
Author :
Sonegawa, T. ; Arakaki, T. ; Maehama, T. ; Jiang, W. ; Yatsui, K.
Author_Institution :
Department of Electrical and Electronic Engineering, Univ. of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
Abstract :
Ferroelectric (PbTiO3 or Pb(Zr,Ti)O3) thin films have been successfully prepared on Si(100) or pyrex glasses by backside deposition of intense pulsed ion beam evaporation. The ion beam parameters were typically beam energy = 1.3 MeV, ion-current density on target = 0.7 kA/cm2, pulse duration = 50 ns. The composition of the thin films was good agreement with that of the original target. The relative dielectric constant at 1 kHz was obtained to be 20, while that by normal front side deposition was 150.
Keywords :
Atomic layer deposition; Crystallization; Lead; Substrates; Pb(Zr,Ti)O3; PbTiO3; ferroelectric film; ion-beam evaporation;
Conference_Titel :
High-Power Particle Beams, 2000 13th International Conference on
Conference_Location :
Nagaoka, Japan
