Split-Gate-Enhanced Power UMOSFET With Soft Reverse Recovery

Author

Ying Wang ; Wen-Li Jiao ; Hai-Fan Hu ; Yun-Tao Liu ; Jing Gao

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

2084

Lastpage

2089

Abstract

A split-gate-enhanced power UMOSFET integrated with Schottky element is studied. In this device, a Schottky rectifier is integrated into every unit cell of the split-gate-enhanced UMOSFET (SGE-UMOS). 2-D simulations show that the device can achieve a low forward voltage drop of 0.48 V, around 28% lower than the 0.78 V of an SGE-UMOS. Numerical simulation also shows a 38% reduction in the reverse recovery time and three times improvement in the softness factor at a breakdown voltage (BV) of 150 V when compared with SGE-UMOS at room temperature. By reducing the width of the Schottky rectifier electrode, a further reduction in the leakage current until approaching the SGE-UMOS can be obtained. The unclamped inductive switching and the reverse recovery characteristics at an elevated temperature of 400 K, and the ON-state and OFF-state BV versus temperature are also studied.

Keywords

electric breakdown; electric potential; electrochemical electrodes; leakage currents; numerical analysis; power MOSFET; rectifiers; switching convertors; 2D simulation; OFF-state BV; ON-state BV; SGE-UMOS; Schottky rectifier electrode; breakdown voltage; leakage current; numerical simulation; soft reverse recovery; split-gate-enhanced power UMOSFET; temperature 293 K to 298 K; temperature 400 K; unclamped inductive switching; voltage 0.48 V; voltage 150 V; voltage drop; Elevated temperature; ON-state characteristic; Schottky element; forward voltage drop; soft reverse recovery; split-gate-enhanced (SGE); unclamped inductive switching (UIS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2257789

Filename

6515180