Title :
Surface potential model of a high-k HfO2-Ta2O5 capacitor
Author :
Angelov, George ; Bonev, Nikolay ; Rusev, Rostislav ; Hristov, Marin ; Paskaleva, Albena
Author_Institution :
Dept. of Microelectron., Tech. Univ. of Sofia, Sofia, Bulgaria
Abstract :
A compact model of a MOS capacitor with high-k HfO2-Ta2O5 mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP model. After fitting the C-V characteristics in Matlab the model is coded in Verilog-A hardware description language to interface with Spectre circuit simulator within Cadence CAD system. The results are validated against experimental measurements of high-k dielectric structure.
Keywords :
CAD; MOS capacitors; hafnium compounds; hardware description languages; semiconductor device models; tantalum compounds; Cadence CAD system; HfO2-Ta2O5; MOS capacitor; Matlab; PSP model; Spectre circuit simulator; Verilog-A hardware description language; high-k capacitor; high-k dielectric structure; high-k mixed layer stack; surface potential model; Electric potential; Equations; Fitting; High K dielectric materials; Integrated circuit modeling; Logic gates; Mathematical model; Device modeling; PSP; Spectre; Verilog-A; circuit simulation; compact models; high-k gate dielectric;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
