Title :
Extracting the parameters of an EEHEMT nonlinear model for InP HEMT operating at G-band frequency
Author :
Eskanadri, Sina ; Hamedani, Farzad Tavakkol
Author_Institution :
Commun. Dept., Semnan Univ., Semnan, Iran
Abstract :
This paper describes and demonstrates procedure of extraction parameters for a 2-finger with 30μm total gate periphery InP HEMT device by utilizing EEHEMT nonlinear model which has been defined in Agilent-Advanced Design System (ADS) software. We have analyzed complicated equations according to measured DC characteristics of typical 0.07 μm InP HEMT devices and also obtained initial values for AC parameters; then we optimized and tuned these parameters in order to achieve desired S-parameters and noise performance to operate at G-band frequency. Accuracy of extracted model and its simulated results have been investigated by comparing with measured and theoretical characteristics in order to use for design and development of LNA MMICs and other front-end Millimeter wave applications.
Keywords :
III-V semiconductors; S-parameters; high electron mobility transistors; indium compounds; semiconductor device models; AC parameters; Agilent-Advanced Design System software; DC characteristics; EEHEMT nonlinear model; G-band frequency; HEMT device; InP; S-parameters; extraction parameters; front-end millimeter wave applications; noise performance; parameter extraction; size 30 mum; HEMTs; Indium phosphide; Integrated circuit modeling; Logic gates; Mathematical model; Noise; Transconductance; EEHEMT nonlinear model; InP HEMT; Monolithic Millimeter wave Integrated Circuits (MMICs); parameters extraction;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
