Title :
Impact ionization effect in deep submicron MOSFET features simulation
Author :
Speransky, Dmitry ; Trung, Tran Tuan
Author_Institution :
Radiophys. & Comput. Technol. Dept., Belarussian State Univ., Minsk, Belarus
Abstract :
Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.
Keywords :
MOSFET; Monte Carlo methods; electric breakdown; elemental semiconductors; impact ionisation; silicon; Keldysh impact ionization effect model; Si; channel length; deep submicron MOSFET simulation; ensemble Monte-Carlo simulation; impact ionization rate treatment; one-parameter Keldysh model; pre-breakdown transistor operation mode; size 100 nm; threshold energy calculation; Impact ionization; Integrated circuit modeling; MOSFET circuits; Monte Carlo methods; Scattering; Semiconductor process modeling; Silicon; MOSFET; Monte-Carlo; impact ionization; threshold energy;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
