Impact ionization effect in deep submicron MOSFET features simulation

Author

Speransky, Dmitry ; Trung, Tran Tuan

Author_Institution

Radiophys. & Comput. Technol. Dept., Belarussian State Univ., Minsk, Belarus

fYear

2012

fDate

24-26 May 2012

Firstpage

66

Lastpage

68

Abstract

Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.

Keywords

MOSFET; Monte Carlo methods; electric breakdown; elemental semiconductors; impact ionisation; silicon; Keldysh impact ionization effect model; Si; channel length; deep submicron MOSFET simulation; ensemble Monte-Carlo simulation; impact ionization rate treatment; one-parameter Keldysh model; pre-breakdown transistor operation mode; size 100 nm; threshold energy calculation; Impact ionization; Integrated circuit modeling; MOSFET circuits; Monte Carlo methods; Scattering; Semiconductor process modeling; Silicon; MOSFET; Monte-Carlo; impact ionization; threshold energy;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Conference_Location

Warsaw

Print_ISBN

978-1-4577-2092-5

Type

conf

Filename

6226277