Time-domain waveform based extraction of FinFET nonlinear I–V model

This work presents a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data required for the proposed modelling strategy consist of a small set of low-frequency time-domain waveform measurements. Numerical optimization is adopted to identify the model parameters. The validity of the proposed method is verified by its application to a silicon FinFET. Very good agreement between model predictions and nonlinear measurements is demonstrated.