DocumentCode
564176
Title
SRAM lifetime improvement by using adaptive proactive reconfiguration
Author
Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio
Author_Institution
Dept. of Electron. Eng., UPC Barcelona Tech, Barcelona, Spain
fYear
2012
fDate
24-26 May 2012
Firstpage
115
Lastpage
119
Abstract
Modern generations of CMOS technology nodes are facing critical causes of hardware reliability failures, which were not significant in the past. Such vulnerabilities make it essential to investigate new robust design strategies at the Nano-scale circuit system level. In this paper we have introduced an adaptive proactive reconfiguration technique that considers the inherent process variability (variability-aware) and BTI aging, and effectively enlarges the SRAM lifetime.
Keywords
CMOS integrated circuits; SRAM chips; ageing; integrated circuit design; integrated circuit reliability; nanoelectronics; BTI aging; CMOS technology; SRAM lifetime improvement; adaptive proactive reconfiguration; hardware reliability failures; nanoscale circuit system level; process variability; robust design strategies; Adaptive systems; Aging; Degradation; Fluctuations; Random access memory; Stress; BTI aging; SRAM; multi-spare proactive reconfiguration; process variability; reconfiguration;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location
Warsaw
Print_ISBN
978-1-4577-2092-5
Type
conf
Filename
6226284
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