Title :
Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuations
Author :
Almudéver, Carmen G. ; Rubio, Antonio
Author_Institution :
Electron. Eng. Dept., UPC, Barcelona, Spain
Abstract :
Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location during the synthesis and the presence of metallic CNTs (m-CNTs). In this work we analyze the impact of CNT density fluctuations on carbon nanotube field effect transistor (CNFET) performance. A CNFET reliability analysis is also presented because of CNT density variations can cause a complete failure of CNFET.
Keywords :
carbon nanotube field effect transistors; semiconductor device reliability; CNFET; carbon nanotube density fluctuations; reliability analysis; variability analysis; CNTFETs; Carbon nanotubes; Integrated circuit reliability; Logic gates; Very large scale integration; CNFET; CNT; CNT density variability;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
