Title :
Design of a 225 GHz frequency tripler using planar Schottky diode
Author :
Lu, Qiuquan ; Zhang, Yong ; Liu, Wei ; Zhou, Peihan ; Wu, Yonglun
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A 225 GHz frequency tripler using commercially available GaAs Schottky barrier diodes is proposed in this paper. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The tripler exhibits that the highest simulated efficiency is 19.5% at 228 GHz and the typical efficiency is 11.9% from 210GHz to 240 GHz.
Keywords :
III-V semiconductors; S-parameters; Schottky barriers; Schottky diodes; frequency multipliers; gallium arsenide; millimetre wave diodes; millimetre wave frequency convertors; GaAs; Schottky barrier diodes; efficiency 11.9 percent; efficiency 19.5 percent; frequency 210 GHz to 240 GHz; frequency tripler; millimeter-wave small-signal S-parameter measurements; planar Schottky diode; Harmonic analysis; Impedance; Integrated circuit modeling; Low pass filters; Power harmonic filters; Schottky diodes; Simulation;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230243
