• DocumentCode
    564350
  • Title

    Forward behavioral modeling of concurrent dual-band power amplifiers using extended real valued time delay neural networks

  • Author

    Huang, Zihong ; Chen, Wenhua ; Feng, Zhenghe ; Ghannouchi, Fadhel M.

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • Volume
    5
  • fYear
    2012
  • fDate
    5-8 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The distortions induced by inter-modulations and cross-modulations in concurrent dual-band power amplifiers (PAs) are evidenced and characterized using multi-tone signals. Given the presence of cross-modulations, a comprehensive extended real-valued time-delay neural network (extended-RVTDNN) is proposed to model the nonlinear behavior of concurrent dual-band Pas. Two three-carrier WCDMA signals are applied to a dual-band Doherty PA prototype for modeling verification. The experimental results show that the proposed model approximates the PA with normalized mean square errors (NMSEs) of -38.48dB and -35.42dB in the lower and upper bands, respectively. Compared with the conventional single-band RVTDNN, this new method achieves an improvement in accuracy of more than 10dB.
  • Keywords
    circuit simulation; code division multiple access; delays; electronic engineering computing; linearisation techniques; neural nets; nonlinear distortion; power amplifiers; concurrent dual band power amplifier; cross-modulation distortion; dual band Doherty power amplifier; extended real valued time delay neural networks; forward behavioral modeling; intermodulation distortion; modeling verification; multitone signal; three carrier WCDMA signals; Accuracy; Artificial neural networks; Computational modeling; Dual band; Mathematical model; Power amplifiers; Power amplifiers; cross modulation; memory effects; neural networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4673-2184-6
  • Type

    conf

  • DOI
    10.1109/ICMMT.2012.6230449
  • Filename
    6230449